-
1 характеристики биполярных приборов
Русско-английский словарь по микроэлектронике > характеристики биполярных приборов
-
2 требуемые рабочие характеристики
1. perfomance objectives2. performance objectivesРусско-английский большой базовый словарь > требуемые рабочие характеристики
См. также в других словарях:
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Bipolar encoding — An example of bipolar encoding, or AMI (Alternate mark inversion). In telecommunication, bipolar encoding is a type of line code (a method of encoding digital information to make it resistant to certain forms of signal loss during transmission).… … Wikipedia
Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… … Wikipedia
Heterostructure-emitter bipolar transistor — The Heterojunction emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier… … Wikipedia
high-performance bipolar integrated-circuit process — kokybiškųjų dvipolių integrinių grandynų technologija statusas T sritis radioelektronika atitikmenys: angl. high performance bipolar integrated circuit process vok. Hochleistungs Bipolartechnik, f rus. технология высококачественных биполярных… … Radioelektronikos terminų žodynas
Innovations for High Performance Microelectronics — Leibniz Institut für innovative Mikroelektronik Logo der IHP GmbH Kategorie: Forschungseinrichtung Träger: Land Branden … Deutsch Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Robert Downey, Jr. — Robert Downey, Jr. Downey, Jr. at the 83rd Academy Awards in 2011 Born Robert John Downey, Jr. April 4, 1965 (1965 04 04) (age 46) New York City, U … Wikipedia
Power semiconductor device — Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). They are also called power devices or when used in integrated circuits, called power… … Wikipedia
Omega-3 fatty acid — For an explanation of n and numerical nomenclature (such as n−3 or 18:3), see Fatty acid#Nomenclature. Types of fats in food Unsaturated fat Monounsaturated fat Polyunsaturated fat Trans fat Cis fat Omega fatty acids: ω−3 ω−6 ω−9 Saturated fat… … Wikipedia
European Bridges Ensemble — Infobox musical artist Name = European Bridges Ensemble Origin = flagicon|Europe Background = electronic ensemble Alias = EBE Genre = electronic music Occupation = Electronic Ensemble Years active = 2005 present Associated acts =… … Wikipedia